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سر آسو توش مکر جی

سرآسوتوش مکرجی
گذشتہ ماہ کا سب سے بڑا علمی اور تعلیمی حادثہ سر آسوتوش مکر جی کی وفات ہے، بنگال کا یہ سپوت فرزند گو ایک نامور بیرسٹر، ایک قابل جج ہائیکورٹ، ایک بڑا مصنف، ایک مشہور ریاضی دان تھا، تاہم اس کی ناموری، قابلیت، بڑائی اور شہرت کا سب سے بڑا مظہر یہ تھا کہ اس نے تقریباً بیس برس تک ہندوستان کی سب سے بڑی درسگاہ کلکتہ یونیورسٹی پر بہ حیثیت وائس چانسلر سب سے عمدہ اور بہتر حکمرانی کی ان کی اس تعلیمی فرمان روائی کا زمانہ بنگال کی تعلیمی ترقی، اور امتحانات کی وسعت اور یونیورسٹی کے انتظامات کی خوبی اور معاملات تعلیمی میں حکومت کے مقابلہ میں پوری قوت کے ساتھ اپنے حقوق کی حفاظت کے لحاظ سے ہندوستان کا تعلیمی عہد زریں کہا جاسکتا ہے، موصوف نے اپنے بست سالہ عہد فرمان روائی میں یہ ثابت کردیاکہ جہاں تک یونیورسٹی کا تعلق ہے بنگال حکومت کی بے جا قید سے آزاد اور خود مختار ہے، ۲۹؍ مئی ۱۹۲۴؁ء ان کی وفات کا دن بنگال کے دائرہ تعلیم کے لیے ایک سانحہ عظیم ہے۔ (’’س‘‘، جون ۱۹۲۴ء)

 

The Prophet Muḥammad (S. A. W) : A Universal Messenger of Peace (An Overview of the Prophet Muḥammad (SAW) ’s Relations With the Non-Muslims

Islām, as the religion of peace and mercy, teaches and preaches peace, justice, tolerance, goodwill and equality among the human beings. Being the trustee of Allāh, man has been prescribed some requirements for the regulation of human conduct. The Prophet Muḥammad (r) is the personification of these teachings and commandments of Allāh. His conduct is “the Perfect Example” and “the Role Model” to be followed by human beings. He has been titled in The Qur’ān as (al-Raḥmah) the mercy for all the worlds. Whatever aspect of the Prophet Muḥammad (r) ’s life is investigated, it is proved to be unbiased and stands as a hallmark for the universal peace, justice, tolerance and equality, not only for the believers, but, for the non-Muslims, even for the worst enemies, as well. The first part of this paper describes the concept of peace in Islām and the role of the Prophet Muḥammad (r) as the messenger of the religion of peace. The second part of the paper focuses on the characteristics of the Prophet Muḥammad (r) as the messenger of peace in every aspect of life. While the third part of the paper is about the study of the historical facts, which discuss the life of the Prophet Muḥammad (r) as a historical figure and there is no doubt in his personality and character.

Thin Films Solar Cells Based on Semiconducting Bismuth Sulphide and Quantum Dots Heterojunction

The present research work was aimed to investigate the potential of bismuth sulfide and lead sulphide quantum dots thin films to be employed as n-type and p-type nanomaterials for efficient solar harvesting. Binary and ternary n-type bismuth sulphide and p-type lead sulphide thin films at different dopant concentration levels were deposited by the chemical bath deposition (CBD) and Successive Ionic layer Adsorption Reaction (SILAR) methods, respectively. Nitrate salts were used as cationic precursor, while thioacetamide and sodium sulphide were used as S2- source for deposition of bismuth sulphide and lead sulphide thin films, respectively. The aim of the study was also to improve the optoelectronic properties and reduce the toxicity level of constituent materials particularly, lead sulphide by means of doping. Few earth abundant and environment friendly, bi and tri-valent cations like; Cu2+, Ni2+, Co2+ and Al3+ were used as dopants. Five doped series of Bi2S3 and two series of PbS quantum dots thin films having different dopant content were deposited on microscopic glass slides. CBD and SILAR were found as the suitable and cost effective methods even extendable for the deposition of derivatives of both Bi2S3 and PbS thin films, respectively. Phase composition, optical, electrical, morphological and electronic transport properties were investigated by X-Ray Diffraction, UV-Vis. Spectroscopy, Photoluminescence, Hall Effect Studies, Scanning Electron Microscopy and Atomic Force Microscopy. The film thickness was measured by ellipsometry and was found to be dependent on the composition of bath solutions. Optical parameters i.e. absorption-coefficient, dielectric constants, dispersion and Eurbach energy were investigated. Electronic as well as transport properties including conductivity, type of charge carrier, sheet carrier concentrations and mobility of charges were also studied. The obtained data revealed that all deposited Bi2S3 and PbS quantum dots thin films have direct allowed band gaps energies (Eg). For Bi2S3 thin films, Eg value was 1.6eV which upon dopant addition reduced down to 1.1eV, while in case of PbS quantum dots thin films, Eg was as high up to 2.1eV which was successfully reduced down to 1.8eV. Doping also played a role to enhance the absorption capacity of the materials, especially for Bi2S3 derivatives. In case of Bi2S3 thin films and its derivatives, values of refractive index (n) were found in the range of 2.9 to 1.3 and for extinction co-efficient (k) values were 1.03 to 0.3. While, in case of PbS quantum dots thin films, respective values were in the range of 1.6 to 1.5 and 0.1 to 0.002, respectively. Photoluminescence spectra exhibited by all doped derivatives were also modified with reduced luminescence intensity. Ellipsometry studies revealed the decrease in film thickness for all samples but only in case of Al3+ doped Bi2S3, the thickness increased from 269.99 to 506.04 nm. Structural analysis showed that Bi2S3 conserved its orthorhombic crystal lattice for Ni2+ and Co2+ doped series. While for Cu2+ doped series, emergence of new crystalline phase occurred and for Al+3 doped series, a transition from crystalline to amorphous phase was observed.In case of quantum dots, few other peaks were observed along with PbS cubic phase. Topographical analysis validated the use of most of the synthesized materials in photovoltaic devices due to homogeneous and compact film deposition. Optoelectronic properties suggested that doping is an effective tool to enhance the charge carrier concentration for both the studied materials. All the synthesized binary and ternary materials were studied for fabrication of new heterojunctions in photovoltaic devices. Results showed that efficiency was enhanced from 0.36% to 0.54%, owing to the modification in the characteristic properties of individual n and p layers.
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