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سید صادقؔ حسین

سید صادقؔ حسین (۱۸۹۸۔۱۹۸۹ء) نام اور صادقؔ تخلص کرتے تھے۔ آپ کھادڑ پاڑہ (کشمیر) میں پیدا ہوئے۔ آپ کے والدین نے کشمیر سے ہجرت کر کے شکر گڑھ (سیالکوٹ) میں سکونت اختیار کی۔ آپ کے والد صفدر کاظمی نے وفاقی سیکرٹری کے عہدے پر کام کیا۔ تعلیم مکمل کرنے کے بعد آپ نے ظفر وال سے وکالت کا آغاز کیا۔ آپ تحریکِ پاکستان میں کارکن کے طور پر کام کرتے رہے۔ ۱۹۳۶ء میں آپ صدر مسلم لیگ شکر گڑھ مقرر ہوئے۔ آپ کا واحد شعری مجموعہ ’’برگِ سبز‘‘ کے نام سے شائع ہوا۔ (۲۷۶)

صادق کو صرف ایک شعر کی وجہ سے اردو شاعر ی میں شہرت ملی۔ بعض حضرات اس شعر کو علامہ محمد اقبال سے منسوب کرتے ہیں۔ یہ شعر ان کے شعری مجموعے ’’برگ سبز‘‘ کی ایک غزل میں موجود ہے۔ شعر ملاحظہ ہو:

تندیٔ بادِ مخالف سے نہ گھبرا اے عقاب                       یہ تو چلتی ہے تجھے اونچا اڑانے کے لیے          (۲۷۷)

صادقؔ نظم اور غزل کے شاعر ہیں۔ نظم پر اقبال کے اثرات ہیں اور غزل میں روایت کی جھلک نظر آتی ہے۔ ان کی شاعری میں قرآن مجید کے منظوم تراجم بھی موجود ہیں۔ انہیں اسلام سے سچی محبت ہے۔ اس محبت کا اظہار وہ خدائے بزرگ و برتر کی حمد و ثنا سے کرتے ہیں۔ وہ قرآن پاک کا ترجمہ کرتے ہوئے عام فہم اور سادہ زبان استعمال کرتے ہیں۔ ان کا اسلوب اتنا اچھا ہے کہ وہ ترجمہ معلوم نہیں ہوتا۔ سورت فاتحہ کی کچھ آیات کا منظوم ترجمہ ملاحظہ ہو:

خداوندِ جہاں تیرے لئے تعریف ہے ساری                 کہ ہے لطف و کرم تیرا ہر انس و جان پر جاری               

تو ہی ہے مالک و مختارِ کل روزِ قیامت کا                           ہر اک ہم میں سے دم بھرتا ہے تیری ہی عبادت کا       

تری ہی...

Plagiarism As an Act of Academic Crime: A Critical Overview in an Islamic & Modern Perspective

Plagiarism is a cheating in form of stealing the ideas or language of others, which is morally and ethically crime and it's also an offense. In the field of education plagiarism is an academic fraud, therefore it is considered a theft. In material world the things which belong to us are considered our property; same is the case in academic world ideas, concepts words and work which belong to us are known as "intellectual property". Thus, we cannot use or cite others’ academic work without permission. Islam is the only religion that advocates for knowledge seeking and sharing with others. So sharing useful knowledge is Sadqa-e-Jāriyia. But this does not mean to attain knowledge and overlook the real source of knowledge. In this connection individual has to give credit whenever one uses the work of others anywhere. Hence, if we are using the work of others and do not cite the source and acknowledge the real author, we indulge ourselves in "Plagiarism" or in academic fraud. So in this scenario, academic world copyright or authorship is important. In recent terminology these are known as "intellectual property rights". In present era deceiving and harming of others has become common. In academia, "intellectual frauds" are more common nowadays. The objective of this article is to highlight the Islamic perspective in the avoidances of plagiarism. In this regard, Qur᾽ānic verses and Ahādīth have been used for exploring how Islam has indicated the avoidances of plagiarism. The main theme of this paper is to highlight and explore the Islamic vision regarding the academic theft and current preventive practices in Pakistan. It is suggested & concluded that in Islam plagiarism is prohibited. It also indicates the terms & conditions for the use of academic work of other scholars. There is dire need that the Muslim experts should also revive new Islamic copyright rules and regulation for honest academic writing.

Modeling Techniques of Submicron Gaas Mesfets and Hemts

This thesis discusses the electrical response of submicron GaAs MESFETs and HEMTs to develop a physical model. Nine different FET models have been presented and their ability to simulate submicron GaAs MESFET characteristics are checked. To demonstrate the validity of a model, I-V characteristics of short channel MESFETs are simulated and compared with experimental data. The accuracy of a model is reported by evaluating its RMS error values. A comprehensive new model is developed to simulate I-V characteristics of short channel GaAa FETs. It has been demonstrated that the proposed model is a comprehensive one, capable of simulating DC characteristics of GaAs MESFETs including those having significant non-ideal Schottky barrier response. The model has also been applied successfully to I-V characteristics of GaAs HEMTs. The Schottky barrier interfacial layer dependent performance of submicron GaAs MESFETs has been discussed by using their output and transfer characteristics. The mobility of carriers, scattering from the channel into the Schottky barrier gate, increases significantly for the devices which have a relatively thicker interfacial layer. The negative effects of increased carriers’ mobility from MESFET Schottky barrier gate are discussed and a plausible explanation is given for reduced barrier lowering in the presence of interfacial layer. Based on the proposed explanation the definition of threshold voltage has been redefined involving the concept of interfacial layer thickness. A technique is developed to estimate intrinsic small signal parameters of GaAs MESFETs and HEMTs. In the proposed technique DC characteristics are first evaluated. Once a good DC match is attained then small signal parameters are evaluated. To check the validity of the proposed technique submicron GaAs MESFETs and HEMTs of varying gate length have been simulated. It has been shown that the proposed method is accurate as well as efficient in estimating AC parameters of GaAs FETs by using their DC characteristics, and could be employed as a useful tool in device simulation software.
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