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مڈھلی گل

مڈھلی گل

میرا تعلق اوس خوش قسمت پیڑھی نال اے جس دادی، نانی، ماسی تے پھپھی تے رشتیاں دا موہ رج کے مانیا۔ گھر وچ دادی یاں نانی کولوں روز کہانی سننی تے جے کر ایہناں رشتیاں آنا ہوندا تاں چاء چڑھ جانا۔ جدوں ایہناں دے پرتن دا سماں آنا تاں کدے ایہناں دی جتی لکو دینی تے کدے کپڑیاں والی گٹھڑی۔ جے انج نہ کرنا تاں رو رو کے برا حال کر لینا۔ وقتی طور تے اوہناں نے اپنا پروگرام اگے پاء دینا تے رات نوں مڑ کہانی سنن دا موقع مل جانا۔ اگلی سویر ایہناں ستے ہوئے چھڈ کے ٹر جانا۔ کدے کدے ایہناں کولوں دن سمے وچ کہانی سناون دی منگ کرنی تاں اگوں جواب کجھ انج دا ملنا:

اوئے کھوتیا! بھلا کوئی دن نوں وی کہانی سندا اے۔ دن ویلے کہانی سنئے تاں بندہ رستہ بھل جاندا اے۔

فیر حیاتی دے پنچھی نے اجہی اڈاری ماری کہ ایہہ رشتے آلوپ کیہ ہوئے کہانیاں وی لک گئیاں تے ہن جدوں اوہ رشتے تے کہانیاں یاد آندیاں نیں تاں من وچوں اک ہوک نکل دی اے۔

میں ایس گلوں اپنے آپ نوں بہوں خوش قسمت سمجھدا ہاں کہ مینوں سروس دے دوران اجہے طالب علم ملے جنہاں لوک کہانیاں اکٹھیاں کرن وچ میری رج کے مدد کیتی۔ میں کئی وار اوہناں دے بزرگاں نوں ملن اوہناں دے گھریں گیا تے ایہہ کہانیاں لکھیاں جو ہن تہاڈی سیوہ وچ کتابی روپ وچ پیش کر رہیا آں۔ پڑھو شاید تہانوں وی کسے رشتے دی یا د آ جاوے۔ جے انج ہو جاوے تاں اوس دی بخشش لئی دُعا ضرور کرنا۔

کہانیاں نوں سو دھن تے ترتیب دیون وچ بہتا ہتھ میرے گھر والی پروفیسر صفیہ ایوب ہوراں دا اے۔ میں اوہناں...

Islamic Charity and Social Development in Pakistan

“Whoever extinguishes the fire of the greed of “Nafs (self)” gets prosperous” is the leitmotif of Quran. Islam in its best is the religion of the oppressed, even itsworships rather than mere rituals are conduit of socioeconomic and political justice a panacea to social development. Prayers of community stay hypocritical ifpoverty, destitution and oppression prevail in community. Quran crushes the spirit of acquisitiveness and strikes moral order based on socio-economic andpolitical justice. For social equilibrium charity, Zakat and Sadaqat are recurrent theme of Quran. To the Dreamer and the Architect, Pakistan was poised tobecome an Islamic welfare state. So, this paper intends to portray what is needed to eliminate social inequalities in the social fabric of the state. What the people and the state ought to do in the light of Islamic ideals? To Shah Wali Allah, Zakat is a sure enough recipe to run a state and strike social equilibrium if employed to the spirit of Quran.

Fabrication and Investigation of Rare-Earth Oxide Thin Films Sandwiched Complexes

This dissertation reports the fabrication and characterization of CeO2 based nonvolatile memory devices as metal/insulator/metal structures. The RRAM devices have been deposited under various deposition conditions using different electrodes, with different stack morphology and various thicknesses of active CeO2 layers. In the case of Zr/CeOx/Pt devices a forming-free bipolar resistive switching has been observed. HRTEM and EDX studies have indicated the formation of a ZrOy layer at the Zr/CeOx interface. The observed resistive switching has been suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies. The presence of oxygen vacancies has been noticed through XRD and confirmed by EDX in the nano-polycrystalline CeOx film and in the nonstoichiometric ZrOy interfacial layer. Similar results have been observed for the resistive switching characteristics of Pt/CeOx/TiN devices as confirmed by XPS, but in this case, the observed resistive switching behavior can be attributed to an interfacial layer TiON, as determined by HRTEM image. That is why this device exhibits low operation current (100 μA), high ON/OFF resistance ratio (>105) and good retention both at room temperature and at 85 °C. More interestingly, the TaN/CeOx/Pt based devices exhibited bipolar resistive switching even without any requirement of electroforming step. For these devices, TaON interlayer, as verified by HRTEM and XRD, has been suggested to play the main role in the resistive switching mechanism which stems from connection and disconnection of filamentary paths made of oxygen vacancies. On inserting an ultrathin metallic layer in Ti/CeO2/Al/CeO2/Pt stack, the resultant device has demonstrated dual resistive switching behaviour. These devices could switch between the two operating modes merely by choosing the polarity of RESET voltage. In addition, the requirement of identical current compliance during the SET process of both xxvii modes provides an additional advantage of simplicity in device operation. On the basis of analyses of current–voltage characteristics and temperature dependence of resistance, resistive switching mechanism has been proposed to be originated from a combined effect of field induced diffusion of oxygen and Al ions in the sandwiched ceria matrix. Without metallic insertion, bilayer Ti/CeO2-x:CeO2/ITO memory stacks have demonstrated stable bipolar resistive switching behavior with low-voltage operation and good endurance. In addition, the narrow cycle-to-cycle and device-to-device distributions of resistance switching parameters have been proposed to originate from the electric field induced drift of defects preferably along grain boundaries in the bilayer structure of ceria. On using both electrodes of conducting oxide (instead of metals), fully transparent (with >80% optical transmission) RRAM devices in ITO/CeO2/ITO format (with weak polycrystalline CeO2 phase) have been found to exhibit reliable bipolar switching behavior. The dual role of ITO polycrystalline films as defects reservoir as well as source of O2- ions in these devices becomes the cause of good data retention (over 104 s) and reliable performance both at room temperature and 85 oC. In almost all the devices studied in this PhD work, Ohmic and Poole Frenkel conduction mechanisms are found to be responsible for charge transport in the low- and high-resistance states respectively. The observed RS characteristics and performance of various CeO2-based devices have shown their potential as candidates for future non-volatile memory applications.
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