Search from the Journals, Articles, and Headings
Advanced Search (Beta)
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...

سہ نثری

سہ نثری
وہ بھی عجیب پاگل لڑکی تھی
جو کتابوں میں پھولوں کی طرح رکھتی تھی
میری نثری نظموں ، نثموں کے تراشے
۔۔۔۔۔۔۔
جس نے رقص کرتی ہوائوں کی گرہ کھولی تھی
چناب اور نیل کی داستاں سنائی تھی
آج وہ صحرا میں آنکھیں نچوڑتا پھرتا ہے
۔۔۔۔۔۔۔
عقیدت سے دیے روشن کرتے ہوئے
پوجا کی تھالی میں دل سجا کر
مندروں میں داسیاں رقص کرتی رہتی ہیں

مولانا شبلی نعمانی کے چند تفردات اور ضعف استدلال سیرۃ النبی کی روشنی میں ایک ناقدانہ جائزہ

Maulānā Shiblī Nu‘mānī (1914) was a great Muslim scholar of sub-continent. Shiblī was a versatile scholar in Arabic, Persian, Turkish and Urdu. He collected much material on the life of Prophet of Islam, Muhammad (ﷺ) but could write only first two volumes of the planned work the Sirat-un-Nabi(ﷺ). His disciple Syed Sulaymān Nadvī, made use of this material and added to it and also wrote remaining five volumes of the work, the Sīrat Al-Nabī(ﷺ) after the death of his mentor. Shiblī was greatly inspired by the progress of science and education in the West. He wanted to inspire the Muslims to make similar progress by having recourse to their lost heritage and culture, and warned them against getting lost in the Western culture. The writer of this article has written a preface followed by an introduction of life and work of Maulānā Nu‘mānī. The next part consists of explaining distinctive features of Shiblī’s book. Maulānā Nu‘mānī dedicated his entire life for the sake of Islam. He had a high quality awareness of the Quran and Sunnah. In his book “Sīrat Al-Nabī", he proved his uniqueness (tafarrudat) regarding various Islamic teachings. In this article I have endeavored to collect some of his uniqueness (tafarrudat) on various issues. Maulānā Nu‘mānī's uniqueness and exclusive ideas were unacceptable for many of contemporary scholars and traditional religious leadership. This article contains some of the selected religious issues in which Shiblī has differed, on the basis of arguments from Quran and Hadith, from traditional scholars. In this article I have analysed Allama's such ideas from his original writings.

Elevated Temperature Modeling of Wide Bandgap High Electron Mobility Transistors

This thesis presents elevated temperature modeling of the 3rd generation wide bandgap GaN High Electron Mobility Transistors (HEMTs). In AlGaN/GaN HEMTs, Two Dimensional Electron Gas (2-DEG) can be achieved without having a dopant layer, because of the piezoelectric e ect found inherently in GaN semiconductor. This provides an increased saturation velocity and GaN HEMT, therefore, is a considered promising candidate for microwave power applications. In therst part of thesis, an analytical model is developed to predict temperature dependent DC characteristics of AlGaN/GaN HEMTs. The model comprehensively incorporates, temperature dependent variation in Schottky barrier height,b(T); bandgap discontinuity,Ec(T); sheet carrier concentration of 2- DEG, ns(T); saturation velocity,sat(T) and carriers mobility,(T). It has been shown that by increasing the ambient temperature, there is a decrease inb; an increase in ns; a decrease insat of 2-DEG carriers and a decrease inT . A comparative analysis revealed that the proposed model''s accuracy is at least 30% better than its counterparts. In the second part of thesis, AlGaN/GaN HEMTs AC characteristics are modeled by developing an analytical technique. In the proposed technique, temperature dependent ns(T) of 2-DEG isrst assessed to predict the DC characteristics of AlGaN/GaN HEMTs. Engaging the modeled DC data and by evaluating depletion layer capacitors, device''s intrinsic small signal parameters are determined. By employing assessed small signal parameters, S-parameters of the device are calculated and their compliance with the measured data ensures the validity of the proposed mechanism. In the third part of thesis, a numerical model to simulate output and transfer characteristics of GaN HEMTs is developed. The model takes into account dependence of output conductance on the device drain and gate bias, and simulates both positive and negative conductance to a good degree of accuracy. Appearance of peak transconductance to a relatively higher negative gate bias is a routinely observed phenomenon in GaN HEMTs, and the proposed model has the ability to simulate such 2nd order e ects with a good degree of accuracy. A comparative study revealed that the proposed model o ers at least 17% improved accuracy compared to other such models reported in literature. The accuracy of the model was also checked at elevated temperature and found signi cantly better than its counterparts. As, the model is based on a single expression, it is therefore easy to handle with and can comfortably be used in computer aided design software to assess the temperature dependent performance of GaN HEMTs for their possible integration into power circuitries.
Asian Research Index Whatsapp Chanel
Asian Research Index Whatsapp Chanel

Join our Whatsapp Channel to get regular updates.