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100. Al-‘Adiyat/The Chargers

100. Al-‘Adiyat/The Chargers

I/We begin by the Blessed Name of Allah

The Immensely Merciful to all, The Infinitely Compassionate to everyone.

100:01
a. By the war-horses, charging, snorting, rushing to the battlefield,

100:02
a. striking sparks with their hooves,

100:03
a. and charging by the dawn,

100:04
a. raising a trail of dust,

100:05
a. and storming into the midst of the enemy troops together.

100:06
a. Indeed, the human being has always been ungrateful and grudging to his Rabb - The Lord,

100:07
a. and truly he is a witness to it,

100:08
a. and he is truly very excessive as well as aggressive in his passion for wealth.

100:09
a. But does he not realize what will happen to him when the contents of the graves are thrown out -

100:10
a. and that which is within the hearts will be made known,

100:11
a. at that Time, their Rabb - The Lord will be Fully Aware of them?

The Rise of Greek Philosophy in the Muslim World and Imam Ghazali’s Tahafat-ul-Falasafah (An Analytical Study)

Imam al-Ghazali has criticized not the logical principles but their misuse and incompetence of philosophers. In addition, Imam al-Ghazali's objective position on philosophy and science in the objectives of the philosopher is highlighted that he had no problem with mathematics and in his view the difference in logic is actually the terminology. Imam al-Ghazali's personality has been debated in various contexts in the context of religion, philosophy and science, and even today new aspects of it keep coming to the fore. The reason for this is on the one hand Imam Sahib's intricate personality and on the other hand Imam Sahib's versatility. Modern studies have made Imam al-Ghazali an enemy of philosophy and science. Along with Orientalist wisdom, modern Islamic scholars also studied Imam al-Ghazali on the methodology of Enlightenment, due to which they too came to the same conclusion that Imam al-Ghazali is the biggest obstacle in the way of philosophy and science in Islamic civilization. Following in his footsteps, our traditionalist scholars now present Imam al-Ghazali as the victorious philosopher. No, but absorbed it. In this article, we have tried to make it clear that integration is a prominent element of Ghazali's philosophy of thought. Rejection of philosophy has become the identity of Imam Ghazali while passion for philosophy is a sign of his greatness of thought. Imam Ghazali's critique of Tahafat-ul-Falasfa defines the nature and scope of this critique. The main target of Imam Sahib's criticism was the theological conclusions of Muslim philosophers which contradicted the basic tenets of Islam. In addition, Imam al-Ghazali's objective position on philosophy and science in Maqasid al-Falasfa highlights that he had no problem with mathematics and in his view the difference in logic is in fact terminology. There is truth and falsehood in physics. We have to think about it. Yes, there is a lot of falsehood in theology. Imam al-Ghazali is the guarantor of the life of philosophy in theology. This article examines in detail the nature of the relationship between Imam al-Ghazali and philosophy, and how philosophy has influenced Imam Sahib's overall thought. The influence of philosophy on his theology, ethics, theology and principles of jurisprudence has been highlighted. At the same time, the effects of Imam Ghazali on philosophers and philosophers on Imam Ghazali are also presented with examples.

Ion Beam Modification in Metallic Nitride Thin Films Deposited by Pld

Singly charged carbon (C+) ions irradiation effects on surface, structural, electrical as well as mechanical properties of metallic nitride films has been investigated. The thin metallic nitride films of Titanium Nitride (TiN), Zirconium Nitride (ZrN) and Chromium Nitride (CrN) were grown by using Pulsed Laser Deposition (PLD) technique. All films were deposited by the ablation of pure metals of Ti, Zr and Cr targets in reactive nitrogen atmosphere. Nd:YAG (532 nm, 140 mJ, 6 ns, 10 Hz) laser beam was employed as source of irradiation for PLD. The optimization of deposition parameters especially the nitrogen gas pressure and substrate temperature for the growth of good crystalline metallic nitride films has been performed. In order to study the effect of singly charged carbon (C+) ions irradiation on deposited films, they were exposed to ions of different energies of 1 MeV and 2 MeV at different doses ranging from 0.4×1014 to 1.8×1015 ions/cm2. The surface topography and structural properties of as deposited and ion irradiated films were investigated by Atomic Force Microscopy (AFM) and X-ray Diffractometer (XRD) respectively. A four point probe setup was used to investigate electrical behavior of ion irradiated thin films. The variations in surface hardness by ion irradiation were examined using Vickers microhardness tester. For 2 MeV carbon ion irradiation, nanohillocks are formed on both TiN and ZrN films. Whereas, for CrN films, island like structures with perturbed surface morphology are formed. The exposure of TiN films with 1 MeV carbon ions is also responsible for the growth of nanohillocks. It is revealed that the density of nanohillocks strongly depends upon irradiation dose and increases with increasing the ion dose up to certain critical value. Beyond that critical value, the hillocks density decreases and hillocks size increases. It implies that the growth of nanoscale structures is strongly dependent upon the nature (TiN, ZrN, CrN) of nitride films as well as energy and dose of ions. The formation of nanohillocks is explainable on the basis of thermal spike model and is attributed to the localized energy deposition of incident ions that leads to abrupt temperature rise. If temperature rise is higher than the melting temperature of the film, it generates thermal spikes which lead to mechanical stresses by thermal expansion and are responsible for the emergence of nanohiloocks. Structural analysis by X-ray Diffraction (XRD) reveals that ion irradiation produces considerable modifications in structural parameters like lattice constant, crystallite size, dislocation density, strain and residual stresses. Initially an increase in ions dose improves the crystallinity of films up to certain range and then beyond this limit, the crystallinity decreases and causes amorphization. The new carbide phases of TiC and ZrC are also formed due to carbon ion implantation. Four point probe analysis of ion-irradiated films shows the variation in electrical resistivity with ion dose. The modifications in electrical behavior are well correlated with the ion induced modifications in crystallinity as well as phase transformations. The microhardness measurements shows that, ion irradiations significantly changes the surface microhardness of metallic nitride films. The modification in surface microhardness depends upon, ion produced structural modifications especially the variation in crystallite size, formation of new carbide phases and ion induced defects generation. However, more pronounced increase in surface microhardness has been observed for that energy and doses which are suitable to generate harder carbide phases. The carbon ion irradiation is found to be suitable for surface nanostructuding of metallic nitride films and formation of harder carbide phases. The nanostructured metallic nitride electrode is the requirement of electrochemical capacitors and lithium ion batteries to improve their performance. In addition the carbon ion induced formation of carbide phases in metallic nitride films improves their mechanical properties, which is important in the fields of hard and wear resistive industrial coating applications.
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