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محنت دا پھل

محنت دا پھل

پرانے وقتاں دی گل اے کہ اک پنڈ وچ بڈھا کسان رہندا سی۔ اوس دے چار پتر سن۔ جو آپس وچ وی لڑ دے تے لوکاں نال وی۔ لوک اکثر لڑائی دی شکایت اوس بڈھے کسان کول کر دے۔ بابا اوہناں دے ایس وطیرے پاروں سخت پریشان سی۔ اوہناں دی حالت ویکھ کے اوس نوں اوہناں دی بہت فکر لگی رہندی۔ پھر اک دن اجیہا ہویا کہ اوہ سخت بیمار ہو گیا۔ ایتھوں تک کہ اوس دا بچنا مشکل ہو گیا۔ اوس نے اپنے پتراں نوں سدیا تے آکھیا کہ میں تہانوں اک راز دسن لگا آں۔ اپنے کھیتاں وچ اک بہت وڈا خزانہ دفن اے۔ تسی زمین نوں کھود کے کڈھ لئو۔ کسان دے مرن توں بعد اگلے دن ای چاراں نے کھیت نوں کھودنا شروع کر دتا۔ پہلاں تھوڑا پٹیا۔ پر اوہناں نوں خزانہ نہ ملیا۔ ایس توں بعد اوہناں کھیت نوں ہور ڈونگا پٹیا۔ خزانہ فیر وی اوہناں دے ہتھ نہ لگا۔ اوہناں نوں اپنے باپ اُتے بہت غصہ آیا۔ تھک کے اوہ گھر آ گئے۔

ساری رات آپس وچ گل کر دے رہے تے اپنے باپ نوں برا بھلا آکھدے رہے۔ سب توں وڈے نے اوہناں نوں صلاح دتی کہ کھیت دی کھدائی تاں کر لی اے۔ کیوں نہ ایس نوں پانی دے کے فصل بیجی لئی جاوے۔ دوجیاں نے اوس دی گل نال اتفاق کیتا۔ اگلے دن اوہناں کھیت نوں پانی لایا۔ ایس توں بعد بی کھلاریا تے فصل اگن دا انتظار کرن لگ پئے۔ کجھ عرصے بعد فصل اُگ آئی۔ اوہناں دیکھ بھال کیتی۔ اوہناں دی فصل بہت ودھیا ہوئی۔ جدوں فصل نوں کٹیا گیا پیداوار نوں ویچیا تاں اوہناں نوں بہت سارے پیسے ملے۔ جو کہ ایس توں پہلاں اوہناں ویکھے وی نئیں سن۔ ہن اوہ بہت خوش سن۔ ایس ویلے...

HOMESCHOOLING: A FORMULA FOR ESTABLISHING ISLAMIC EDUCATION IN REMOTE COMMUNITIES IN INDONESIA

The disparity in the equality of education in Indonesia, especially in backwoods areas, is one of the problems of education in Indonesia. One of the Government's action in overcoming this gap is by distributing teachers to remote areas of the country. In addition, the government also stipulates several laws and regulations as the formal legality of education in backwoods communities. This study aims to explore the possibility of implementing the homeschool education model (homeschooling) for backwoods communities, as an effort to applied Islamic subject matter and prevail education in Indonesia. This study uses a naturalistic phenomenological approach, using triangulation as one of the data analyzes. The research location is in Hansibong, a backwoods hamlet in the Sojol mountains of ParigiMoutong district, Central Sulawesi. The results of this study found that education in Hansibong is carried out informally within the family. Learning process is held in a traditional way, using very minimal of media, methods and subject matter. The material taught is limited to morality values, reading and writing, arithmetic and the ability to survive in nature. Islamic education in its function as a strengthening of cognitive intelegence, morals, spirituality and nationality has not been provided in learning at home. As a research implication, a homeschooling socialization effort is needed so that the student community can continue to a higher level. The implementation of homeschooling that is not in accordance with the technical guidelines issued by the government will only disserve students because learning outcomes cannot be equalized with existing education levels.

Reliability Assessment of Wide Band Gap Field Effect Transistors

In 1st part of the thesis, an improved temperature dependent analytical model is presented for wide bandgap MESFETs output characteristics. The model involves self-heating effects, which is a common phenomenon in FETs meant to handle a relatively large current and exhibit negative conductance in their output characteristics. A comparative analysis of modeled and observed characteristics exhibited a significant improvement in the modeled data. In 2nd part, an analytical model is presented to assess Miller capacitors of FETs. Based on four distinct regions underneath the Schottky barrier gate of the device, analytical expressions are developed to assess Miller capacitors for both linear, as well as, for saturation regions of operation. It is shown that, relative to earlier reported models, the proposed technique exhibited a significant improvement in assessing the device Miller capacitors. In 3rd part, substrate effects on AC performance of wide bandgap FETs are discussed. A comparative analysis is established, which demonstrated that both Si and SiC substrates are equally good, and there is a nominal change in the AC performance of the device by changing the substrate from Si to SiC. Particle swarm optimization technique is used to achieve optimized intrinsic parameters by involving measured S-parameters. It is established that Si substrate, which is considerably cheaper than SiC, could comfortably be employed to fabricate submicron GaN HEMTs. Finally, 4th part of the thesis presents a nonlinear model to simulate the I −V characteristics of submicron SiC FETs. The region where the Schottky barrier gate loses its control on the channel current, because of the high biased, is successfully modeled for better understanding of the device operation. It is shown that the device performance drastically affected when transconductance to output conductance ratio is less than unity. By attaining accurate compliance between the observed and modeled output characteristics, even for those conditions where the channel is behaving erroneously, device AC parameters are extracted to predict the reliability of the device characteristics under intense operating conditions.
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